FQD12N20 Key Features
- 9 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 18 nC)
- Low Crss (Typ. 18 pF)
- 100% Avalanche Tested
- RoHS pliant
- Part: FQD12N20
- Description: 200V N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 963.00 KB
Other FQD12N20 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FQD12N20L | N-Channel MOSFET |