FQD12N20
FQD12N20 is 200V N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
- 9 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 18 n C)
- Low Crss (Typ. 18 p F)
- 100% Avalanche Tested
- Ro HS pliant
D-PAK
I-PAK
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol
Parameter
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