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FQD12N20 - 200V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 9 A, 200 V, RDS(on) = 280 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A.
  • Low Gate Charge (Typ. 18 nC).
  • Low Crss (Typ. 18 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter.
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Full PDF Text Transcription

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FQD12N20 / FQU12N20 — N-Channel QFET® MOSFET FQD12N20 / FQU12N20 N-Channel QFET® MOSFET 200 V, 9 A, 280 mΩ October 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 9 A, 200 V, RDS(on) = 280 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ.
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